Abstract
ABSTRACTThe Gas Turbine-Modular Helium Reactor (GT-MHR) and the Very-High-Temperature Reactor (VHTR) are next-generation high-temperature reactor types that are being designed to operate under normal conditions with primary coolant outlet temperatures in the range of 850 °C and 1000 °C, respectively. A new type of silicon carbide based diode neutron detector is currently under development in order to monitor the neutron flux in this environment. An important problem, in this context, is the long-time reliability of the diodes under continuous irradiation at high temperatures. In this paper, we discuss a computational methodology to study the accumulation of radiation damage in the detectors as a function of temperature and its influence on the electrical properties.
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