Abstract
This paper discusses the benefits of using silicon carbide (SiC) devices in a three-stage modular power electronic transformer. According to the requirements to be fulfilled by each stage, the second one (the DC/DC isolation converter) presents the most estimable improvements to be gained from the use of SiC devices. Therefore, this paper is focused on this second stage, implemented with a SiC-based dual active bridge. Selection of the SiC devices is detailed tackling the efficiency improvement which can be obtained when they are co-packed with SiC antiparallel Schottky diodes in addition to their intrinsic body diode. This efficiency improvement is dependent on the dual active bridge operation point. Hence, a simple device loss model is presented to assess the efficiency improvement and understand the reasons for this dependence. Experimental results from a 5-kW Dual Active Bridge prototype have been obtained to validate the model. The dual active bridge converter is also tested as part of the full PET module operating at rated power.
Highlights
A line-frequency transformer (LFT) is a key element in transmission and distribution for traditional centralized generation-based systems
It is a the integration of silicon carbide (SiC) devices in the different stages of the power electronic transformer (PET) and identifies the practical limitations three-stage modular PET, with a Cascaded H-Bridge (CHB) converter acting as the front end AC/DC
This paper analyzes the use of SiC devices in three-stage modular PETs
Summary
A line-frequency transformer (LFT) is a key element in transmission and distribution for traditional centralized generation-based systems Their main functionality is to interface different voltage levels in the grid [1]. LFTs are a well-established, relatively cheap, and reliable technology They fail to cope with modern grid demands, such as the integration of distributed resources and energy storage systems, as well as power flow control. The fast advances in wide-band-gap (WBG), specially the Silicon Carbide (SiC), power semiconductors has attracted the attention to their use in the medium voltage (MV) modular three-stage. MOSFETs for three-stage PETs. authors hinted at the importance of analyzing the relevance of including a SiC antiparallel diode to justify its additional cost implication. The paperofisthe organized as follows: SectionPET describes the on selected topology
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