Abstract

This work describes in detail the simultaneous enhancement of the upper critical field (Hc2) and the critical current density (Jc) of MgB2 bulk samples doped with nano-SiC particles, as well as single-walled and double-walled (dw) carbon nanotubes (CNTs). The magnetization properties were examined in a superconducting quantum interference device magnetometer, and four-probe transport measurements were performed using a 50T pulsed magnet to determine Hc2(T). We found that the Jc enhancement is similar in all doped samples at 5K but nano-SiC addition is more effective to improve the flux pinning in the high temperature range (T⩾20K); this improvement cannot solely be attributed to the C incorporation to the lattice but also to the presence of other types of defects (i.e., several kinds of nanoinclusions). CNTs produce a better C incorporation that is more effective to enhance Hc2 [i.e., dwCNT-doped samples reached a record Hc2(0)∼44T value for bulk MgB2]. All the Hc2(T) curves obtained for different types of doping can be successfully described using a model for a two-gap superconductor in the dirty limit.

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