Abstract
We investigated a SiC-based hydrogen gas sensor with MIS (metal-insulator-semiconductor) structure for high temperature applications. The sensor was fabricated by <TEX>$Pd/TiO_2/SiC$</TEX> structure, and a thin titanium dioxide (<TEX>$TiO_2$</TEX>) layer was exploited for sensitivity improvement. In the experiment, dependences of I-V characteristics and capacitance response properties on hydrogen gas concentrations from 0 to 2,000 ppm were analyzed at room temperature to <TEX>$400^{\circ}C$</TEX>. As the result, our sensor using <TEX>$TiO_2$</TEX> dielectric layer showed possibilities with regard to use in hydrogen gas sensors for high-temperature applications.
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