Abstract
High-performance two-dimensional (2D) -photodetectors with the potential for on-chip integration are desired for telecommunication applications. This work presents the photoresponse of planar silicon telluride photodetector (Si2Te3) with under wavelengths of 1310 and 1550 nm light illuminations. We utilized mechanically exfoliated multilayered Si2Te3 to fabricate back-gated phototransistor. The device with 50 nm Si2Te3 flack thickness demonstrated a hole mobility of 0.36 cm2 V1s1 and photo-responsivities of 170.5 AW-1 (0.35 W), and 12.61 AW-1 (0.25 W) at 1310 nm and 1550 nm excitations, respectively. Furthermore, the frequency response of the device with two different metal contacts (Au/Cr and Al/Ti) was tested. The device exhibited moderate broadband response with Au/Cr metal contact of 3dB bandwidth of 1.6 MHz, while 3.8 MHz bandwidth is realized with Al/Ti metal contacts. We also demonstrated a prototype of a heterogeneously integrated Si2Te3 photodetector onto a Si waveguide. The transmission losses in the waveguide were measured before and after the integration. Results demonstrated an attenuation of the optical signal by 24.3 dB and 18 dB for 1310 nm and 1550 nm wavelengths, respectively, that can attribute to the material-induced losses. These findings suggest that Si2Te3 is a promising 2D semiconductor material for optical communication photodetection.
Highlights
Silicon photonics is a standard technology for nextgeneration on-chip optoelectronic applications [1]
The authors are with the Department of Electrical and Computer Engineering, New York University of Abu Dhabi, Saadiyat Marina
The demonstrated responsivities are 170.5 AW−1 and 12.1 AW-1 under 1310 nm and 1550 nm telecom wavelength illumination, respectively. This is the first demonstration of such optoelectronic properties of Si2Te3 in the mentioned bands
Summary
Silicon photonics is a standard technology for nextgeneration on-chip optoelectronic applications [1]. Only a few 2D semiconductor systems have been verified with telecom wavelengths photodetection capability including graphene,[4] black phosphorus,[5] PtSe2,[6] GeP,[7, 8] Tellurium,[9] MoTe2[10]; Several recent studies demonstrate the integration of graphene onto Si photonic chips for various applications such as modulators and photodetectors[11,12,13]. A plasmonically enhanced waveguide-integrated graphene photodetector exhibited ultrahigh bandwidth of 110 GHz with an external responsivity of ~ 0.5 A W–1 at telecom wavelengths [14]. Despite its excellent opto-electronic properties, most TMDC materials are still limited in their response to the visible spectrum (above the Si band gaps) [18] This has hindered their wide deployment in telecommunications applications.
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IEEE Journal of Selected Topics in Quantum Electronics
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
