Abstract
AbstractSi1‐xGex mixed crystals with 5 at% Ge concentration have been grown by the pulling‐down technique using a crucible with multi‐capillary channels. The unique feature of the technique is that Ge solute concentration of the small molten zone is maintained constant due to the condition of no back diffusion of solute through the capillary channels, and that the diffusion‐controlled solute transport causes the effective distribution coefficient to be unity. The Ge concentration was measured by the electron probe microanalysis and observed to be homogeneous along both the longitudinal and radial directions. The two‐dimensional distribution on the whole cross section was also found to be uniform.
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