Abstract
Si1−xGex bulk crystals (0.2<x<0.85) with various B doping levels were grown by the traveling liquidus zone (TLZ) method for fabricating substrates of high mobility electronic devices. Large single crystals with a diameter ranging from 30 to 50mm were achieved. Si1−xGex crystals were characterized by measuring concentration profile along and perpendicular to the growth axis, indicating good compositional homogeneity. High crystalline quality was evaluated by electron backscatter spectroscopy and X-ray diffraction. Measured hole mobility was higher than the previously reported data for the similar dopant concentration and Ge content, suggesting smaller alloy scattering effects and high crystalline nature in the TLZ-grown Si1−xGex bulk crystals.
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