Abstract
Si1-x-yGexCy ternary alloy semiconductor films were prepared on Si(100) substrates by C ion implanting SiGe films and subsequest solid phase epitaxy (SPE). Two-step annealing technique was employed in the SPE processing. The properties of the alloy films were determined using Rutherford backscattering spectroscopy (RBS), Fourier transform infrared spectroscopy (MR) and High-resolution x-ray diffraction (HRXRD) measurements. It is shown that C atoms are located at substitutional sites and the incorporation of C relieves the compressive strain in the SiGe layer.
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