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Abstract
The paper summarizes a few basic properties of SiGe showing that SiGe is an interesting material for high speed electronics. The advantage of using heterostructures in silicon-based technologies is demonstrated by taking SiGe heterobipolar transistors (HBTs) as an example. First results obtained with very fast and low-noise HBTs are briefly mentioned. The paper is concluded by a short discussion of a few optoelectronic properties observed in various Si/Ge, Si/Si1−xGex and Si1−x−yGexCy strained-layer superlattices and quantum wells with particular emphasis on electroluminescence properties and the benefit of these materials for new buffer concepts.
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