Abstract
Although a great quantity of Si single crystal have been used as semiconductor materials in electronic circuits, serious problems still remain for obtaining the mirror-finished surfaces with scratch-free and non-deformed layer. It is most important for mirror-finished Si surfaces to clarify the forming mechanism of mirror-finish. Taking these into considerations, Si single crystals are lapped under the various working conditions, and their characteristics are discussed concerning the mechanism of mirror lapping.The results are as follows : (1) In case of bonded abrasives, the mirror finished surfaces are formed as the aggregation of fine scratches, for both restriction of abrasive behavior and irregularly sized cutting edges, and fine scratches are not removed. (2) With fine loose abrasives (size about 0.1μ), the mirror finished surfaces are produced, on which no scratch is observed under the electron microscope (×4000). (3) As to the mirror finish, pitch lap is superior to other laps, but the long time required for working. (4) By PE lap, finishing surface roughness is about 0.1μ (Hmax). As working time takes short, this lap is suited to produce pre-treated surface of scratch-free mirror finish.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
