Abstract
Silicon K X-ray emission spectra of Si, SiC, Si 3N 4, and SiO 2 are measured using a wavelength dispersive electron probe X-ray microanalyzer. It is shown that the fine structures in the line shape of the low energy tail of the K α characteristic X-ray emission spectra resemble those of the K X-ray absorption near edge structure (XANES). XANES spectra of 1 μm 2 area can be obtained by this method.
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