Abstract
A new Si-SiO2 bonding process has been developed to achieve a uniform spacing between two silicon wafers of 2 and 3 in. diam. Spacings between 0.1 and 3.9 μm have been obtained so far. Hydrostatic pressure is used to force the two wafers into intimate contact at points where bonding is desired. The bonding is performed at a temperature of ∼1150 °C. The uniformity of bonding and spacing between the wafers is checked by a Fabry–Perot interferometer technique at room temperature and by measurements of superfluid density of He II at low temperature. These results are compared with ellipsometer and stylus measurements of the oxide thickness which is designed to govern the wafers’ spacing. We find that these different techniques yield consistent results.
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