Abstract
Nearly ideal diodes have been fabricated using the in situ junctions present in Si-TaSi2 semiconductor-metal eutectic composites. The composites, prepared by directional solidification at the eutectic composition, have a high density of TaSi2 rods in a quasi-single crystalline P-doped, n-type Si matrix. Analysis of the diodes using current-voltage and capacitance-voltage techniques yields a TaSi2/Si Schottky barrier height of 0.62 eV and evidence that the voltage-dependent depletion zones can be made comparable to the interrod spacing to produce a ‘‘pinch-off’’ condition.
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