Abstract
The authors have achieved a substantial improvement in the ZnSe molecular beam epitaxy of Si(111) by irradiating the substrate surface with a flux of nitrogen free radicals (N*) prior to growth. This new substrate treatment induced an initial two-dimensional growth as revealed by reflection high-energy electron diffraction, Auger electron spectroscopy, and atomic force microscopy. The improved epitaxy was confirmed by high resolution x-ray diffraction.
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