Abstract
We report the fabrication of heterostructure Si/sub 1-x-y/Ge/sub x/C/sub y/ channel p-MOSFETs with low-carbon Si/sub 1-x-y/Ge/sub x/C/sub y/ channels. The use of low carbon mole fraction (y=0.002) has only a small effect (/spl Lt/kT) on the valence band offset. A carbon mole fraction of this value improves the thermal stability of the channel region and makes it possible to use conventional thermal oxidation and ion implant annealing without causing layer relaxation. A peak room-temperature hole mobility of 200 cm/sup 2//Vs was measured in a device with a 30-nm channel and a germanium mole fraction ramped from 10% to 40%.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
