Abstract
A method for silicon solar cell fabrication is being developed around ion implantation and short time furnace annealing techniques. Low temperature and short time furnace annealing process is effective for high efficiency solar cell. As the result of the novel annealing techniques, major reductions in annealing process cost is expected. Solar cells fabricated by P+ implantation and 800°C annealing for 3 min showed a conversion efficiency of 10% without AR coating and BSF structures.
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