SiSiO 2 interface state generation at the surface potential of 0.4 and 0.7 eV

Abstract

Interface state density measurements revealed that Dit(0.7):Dit(0.4) = 1:2.3 and 2:1 for many kinds of stresses. The p-type and n-type Si recombination lifetime measurements showed that 1 Tp : 1 Tn = 1:2.3 and 2:1 for various plasma processes. We proposed a model in which both SiSi and SiO bond deformations occur at the interface during each stress, at the ratio of 1:2 or 2:1, that relats to the observed results.