Si/SiO 2 interface roughness study using Fowler–Nordheim tunneling current oscillations

Abstract

A decrease in the amplitude of Fowler–Nordheim current oscillations (FNCOs) is reported for metal–oxide–semiconductor devices made using Si surfaces that have high spatial complexity roughness. A model based on nonuniform Si reactivity which yields SiO2 thickness fluctuations is used to explain the observations. Previous studies using lower spatial complexity roughness have shown no measurable changes in FNCOs resulting from the oxidation of purposely roughened Si surfaces. The spatial complexity of the purposely roughened Si surfaces was compared using the fractal dimension (DF) as obtained from atomic force microscopy measurements.