Si-SiO 2 interface passivation by plasma NH 3 and atomic H

Abstract

Plasma ammonia treatment at 400 °C leads to de-passivation of a fully hydrogenated Si-SiO 2 interface, and to passivation of a fully de-hydrogenated Si-SiO 2 interface. Plasma NH 3 exposure causes irreversible Si surface damage and degradation of thermal stability. Atomic hydrogen exposure, although it results in similar effects on the Si-SiO 2 interface, does not introduce additional defects or a decrease of the Si surface thermal stability. The difference between plasma NH 3 exposure and atomic H exposure is speculated to be due to either the nitridation of Si-SiO 2 interface or radiation damage resulting from plasma NH 3 exposure. EPR measurements indicate changes of the paramagnetic defect properties and an increase in the paramagnetic defect density generated by plasma NH 3 exposure.