Abstract
High quality Si (strained)/Si0.7Ge0.3 (relaxed) modulation-doped structures incorporating unusually thin (700 nm) buffer layers were grown with molecular beam epitaxy at 700 °C. By utilizing (100) substrates misoriented toward (011) by 4°, the density of threading dislocations was reduced by over an order of magnitude as compared with conventional techniques. These layers produced exceptionally high Hall mobilities of 1790 cm2/V s at 300 K and 19 000 cm2/V s at 77 K on n-type modulation-doped heterostructures. The effect of substrate misorientation on threading dislocation density was investigated using transmission electron microscopy and Nomarski microscopy.
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