Abstract
The hole confinement due to the valence band offset of the Si/SiGe/Si quantum well causes the shrinkage of depletion region for the n-type Si/Si0.2Ge0.8/Si Schottky barrier diodes with Pt gates. The capacitance of Si/Si0.2Ge0.8/Si Schottky diodes has approximately two times the capacitance of the control Si device. Moreover, the high electrical field leads to a high thermionic-field emission current and a large image-force lowering at both reverse and forward biases. The conventional capacitor-voltage method cannot be used to accurately measure the barrier height of Si/SiGe/Si quantum well Schottky diodes due to the shrinkage of depletion region.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
