Abstract
AbstractInfrared absorption associated with localized vibrational modes is studied in CdTe highly doped with silicon. On the basis of the experimental data obtained it is established that Si can form two kinds of point defects in CdTe: SiCd defects acting as donors and SiTe defects acting as acceptors. No evidence is found of the presence of Sica‐SiTe pairs and other defect complexes which could be formed as a result of electrostatic interaction between electrically active defects.
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