Abstract
This paper reviews the developing progress on the synthesis of the silicon quantum dots (Si-QDs) via the different methods including electrochemical porous Si, Si ion implantation, and plasma enhanced chemical vapor deposition (PECVD), and exploring their featured applications for light emitting diode (LED), color-converted phosphors, and waveguide switching devices. The characteristic parameters of Si-QD LED via different syntheses are summarized for discussion. At first, the photoluminescence spectra of Si-QD and accompanied defects are analyzed to distinguish from each other. Next, the synthesis of porous Si and the performances of porous Si LED reported from different previous works are compared in detail. Later on, the Si-QD implantation in silicide (SiX) dielectric films developed to solve the instability of porous Si and their electroluminescent performances are also summarized for realizing the effect of host matrix to increase the emission quantum efficiency. As the Si-ion implantation still generates numerous defects in host matrix owing to physical bombardment, the PECVD method has emerged as the main-stream methodology for synthesizing Si-QD in SiX semiconductor or dielectric layer. This method effectively suppresses the structural matrix imperfection so as to enhance the external quantum efficiency of the Si-QD LED. With mature synthesis technology, Si-QD has been comprehensively utilized not only for visible light emission but also for color conversion and optical switching applications in future academia and industry.
Highlights
Silicon (Si) is the most popular semiconductor comprehensively to be employed as various electronic and photonic devices
To take over porous Si light emitting diode (LED) with instable and low external quantum efficiency (EQE) during long-term operation, the Si-ion implantation into SiO2 or Si3 N4 host matrix for the silicon quantum dots (Si-quantum dot (QD)) formation has emerged in the beginning of
Si-QDs in host matrix is still hardly achieved for providing efficient visible luminescence
Summary
Silicon (Si) is the most popular semiconductor comprehensively to be employed as various electronic and photonic devices. The for the crystalline periodicity be broken up to redistribute the periodicity can boundary be broken condition up to redistribute the density of statescan in energy-momentum space when density of states when material size is decreased around or below the the material sizeinisenergy-momentum decreased around space or below thethe optical wavelength, the de Broglie wavelength, optical wavelength, the de Broglie wavelength, and the coherence length of superconducting and the coherence length of superconducting state The optical characteristics characteristics of Si NC or QD deviate from those of bulk material including the broadened absorption spectrum, the blue-shifting bandgap bandgap energy, and the enhanced quantum confinement, etc.
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