Abstract
To investigate the effect of the removal of entrapped Al on Si purity during Al-Si electromagnetic solidification refining, the formation mechanism and removal principle of entrapped Al in primary Si were studied. The results showed that the agglomeration and irregular shape of primary Si crystals during electromagnetic solidification were the main reasons for the formation of entrapped Al; a higher initial Si content in an Al-Si alloy may result in higher amounts of entrapped Al. The entrapped Al can be effectively removed by first grinding the primary Si to powder particles of ~20 μm and then leaching the particles with acid, which can simultaneously remove other impurities concentrated in the entrapped Al such as Fe, Ca, Ti, and B. Hence, it is proposed that the combination of electromagnetic solidification, acid leaching, and vacuum directional solidification could be used to obtain solar-grade silicon.
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