Abstract
p +-n shallow junction fabrication using on-axis Ga implantation into crystalline and preamorphized Si, in conjuction with rapid thermal annealing, is reported. The implants are performed at energies of 50 and 75 keV for doses of 1 and 3.5×1015/cm2. Taking advantage of the short Ga projection range, low critical dosage (2×1014/cm2) needed for amorphizing the implanted layer, and a low anneal temperature (550–600 °C) required to induce solid phase epitaxial regrowth and activate the Ga dopants in excess of its maximum solid solubility in Si, a shallow junction at a depth of 100 nm and with sheet resistance of 150 Ω/⧠ was obtained using 75 keV Ga implantation at a dose of 1×1015/cm2. The sheet resistance of the Ga-implanted layer can be optimized by adjusting the anneal temperature and time.
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