Abstract
A Si/Pd ohmic scheme (contact resistivity ~2 × 10-4 Ω-cm2 ) annealed between 400 and 650°C has been developed for n-GaP (n~5 × 1017 cm3). The ohmic contact formation mechanism can be rationalised in terms of the solid phase regrowth (SPR) principle and the solid phase epitaxy of Si on n-GaP.
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