Si‐oxide/Si and Si‐oxynitride/Si interfaces analysed by ultra‐low energy SIMS

Abstract

AbstractDepth profile analyses of silicon oxides and oxynitrides are compared using SIMS (Secondary Ion Mass Spectrometry) technique with ultra low energy of primary Ar+ ion beam. SiO2 (5–80 nm thick) layers on p‐Si 〈100〉 were formed by thermal heating of silicon wafers in oxygen flow. SiOx Ny (2–4 nm thick) layers on p‐Si 〈100〉 were obtained by nitrogen implantation followed by plasma oxidation process. The nitrogen implantation was performed with NH3 and N2 plasma sources in 350 °C. The influence of r.f. power, used during implantation on the oxynitride layer properties, was studied.SIMS measurements were done using ultra‐low energy 880 eV Ar+ beam and quadrupole mass spectrometer. Quantitative atomic concentrations of nitrogen and oxygen were calculated basing on Si2N+, Si2O+ and Si2+ secondary ion currents. The obtained layers were also characterised by X‐ray Photoelectron Spectroscopy, ellipsometry and electrical tests. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)