Si - noble metal (Au,Cu,Ag) interface formation studies by AES

Abstract

Room temperature deposition of gold, copper and silver on the Si (111) surface has been studied by AES. The information on the changes of Si(3p) density of states in valence band with Au. Cu, Ag coverage on Si(111) surface have been obtained by means of the Auger Si(LVV) line structure analysis. Auger Si(LVV) line structure extraction have been produced by subtraction of Auger spectra for W-Au(Cu,Ag) system from those for Si-Au(Cu,Ag) at the same adsorbed metal surface concentrations. It has been shown that for Si-Au, Si-Cu systems the main density of Si(3p) states structure peculiarities can be explained by formation of (d-p) hybrid bonds between silicon and metal atoms at the interface, for Si-Ag system only weak interaction between the components has been observed which practically does not change the valence band structure. The differences in the properties of Si-Ag and Si-Au(Cu) interfaces can be explained by different metal d-electron binding energies. The Si-Au(Cu) interface chemical activity concentration dependence can be explained by the solid state electron energy structure formation processes.