Abstract
Silicon in the forms of nanotube (NT), nanowire (NW), and bulk were used as the p-type electrode for zinc-oxide NWs on Si heterojunction light emitting diodes (LED). The LEDs were fabricated by direct contact between p-type Si and n-type ZnO NWs. The results show that using Si NTs leads to a significant improvement in their LED performance including considerably lower turn-on voltage, smaller series resistance, higher rectification ratio, and stronger light intensity. Using this electrode, an excellent rectifying diode behavior was obtained with a turn-on voltage of 0.6 V and a rectification ratio of 15 at 5 V. This study proposes Si NTs as a promising electrode material for the fabrication of ZnO-based heterojunction LEDs.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
