Abstract
A new method for Si nanofabrication was developed by exploiting nanoscale local oxidation using an ultrathin ECR plasma oxynitride nanomask (NANOLOX). ECR nitrogen plasma exposure with resist mask patterns directly forms a nanomask on Si surface. This oxynitride is 2-3-nm thick and acts as an excellent oxidation mask. Using this method, 10-nm-scale Si nanostructures, such as wires, dots, and single electron device structures, can be fabricated. This the first report of lithographically controlled Si nanostructures fabricated using nanoscale local oxidation.
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