Abstract
The synthesis of two-dimensional arrays of Si nanocrystals in anHfO2 matrix has been achievedby deposition of HfO2/SiO/HfO2 multilayer structures followed by high temperature (1100 °C)thermal treatment in nitrogen atmosphere. Silicon out-diffusion from the SiO layer through theHfO2 films has been shown to be the limiting factor in the formation of the Si nanocrystals.Suitable strategies have been identified in order to overcome this limitation. Si nanocrystalformation has been achieved by properly adjusting the thickness of the SiO layer.
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