Abstract
AbstractThe Si LVV Auger lineshapes of the single‐crystal Si(100) surface and the oxygen chemisorbed and clean TaSi2 surfaces are studied by observing the three Auger transitions that have different final states in the valence band. It is seen from the Si and Ta Auger fingerprints that both Si and Ta form oxides due to chemisorption of oxygen on the silicide surface at room temperature. The variations in the Si LVV fingerprint in silicide and the oxygen‐exposed silicide are explained in term of surface effects and the behaviour of the 3s orbital in the bondings involved. Electron energy‐loss spectroscopy is used to understand the different shallow‐level transitions in Ta and the silicide. The electron impact autoionization spectra for TaSi2 and oxygen‐exposed TaSi2 are also presented and analysed, along with the Ta NNN fingerprint to show the oxidation in Ta.
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