Si K-, Si L- and C K-emission bands and electronic structure of amorphous Si1−xCx: H alloys

Abstract

The X-ray Si K-, Si L- and C K-emission bands of a series of amorphous hydrogenated silicon-carbon alloy films (a-Si1−xCx:H, 0 ≤ x ≤ 0.78) have been measured to study the electronic structure and the local silicon and carbon bonding of these alloys. The spectral features in the emission bands are identified and attributed to Si 3p, Si 3s/3d and C 2s/2p derived states. The spectra are compared with available UPS measurements on a common energy scale. - The results indicate that in these alloy films heteroatomic bonds are preferred.