Abstract
Incorporation of ion implantation to AlGaN/GaN high-electron mobility transistor (HEMT) processing has been demonstrated. The source/drain regions formed using Si ion implantation into undoped AlGaN/GaN on sapphire substrate. Devices with gate length of 1 µm and source/drain distance of 5 µm were fabricated. In comparison with the conventional devices without ion-implanted source/drain structures, the ion-implanted devices showed excellent device performance. On-resistance reduced from 10.2 to 4.0 Ω·mm. Saturation drain current and maximum transconductance increase from 600 to 1100 mA/mm and from 100 to 180 mS/mm, respectively. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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