Si etching affected by ir laser irradiation

Abstract

Silicon was etched in an aqueous solution of sodium hydroxide under ir laser irradiation. Two types of lasers were used, a Nd:YAG laser with a wavelength of λ=1.06 μm and a CO2 laser with λ=10.6 μm. Small-size blind holes, through holes and reliefs were formed on a Si target, and even a special type of hole can be formed with help of a CO2 laser, namely a blind hole with a hillock in its center.