Si dot single electron transistor for Internet of nano things

Abstract

To connect digital and physical devices a highly connected global network is termed as Internet. The objective of internet is extended by Internet of Thing (IoT) by connecting devices from different domain. Millions of devices are used for information collection and communication in IoT. Integration of nanotechnology with IoT termed as Internet of Nano Things (IoNT) and plays an Important role in growth of compact devices. The requirement of feature and functionality in compact, handheld and battery operated devices increasing day by day. The battery life is an important factor for these devices. The battery life of these devices can be increased by reducing the power consumption. Single electron devices can play an important role in limiting the power consumption of these devices. In this paper a Si dot Single Electron Transistor is designed with nano scale channel length. Si dot is placed between gate and island to improve electrical properties of device. The characteristics of Si dot SET is compared with a SET without Si dot and capacitance is calculated for both the devices. It is found that device with Si dot possess higher charging energy so it is capable of room temperature operation. This paper also discusses the role of nano devices in IoNT as well as application areas and challenges of IoNT.