Abstract
An ultrahigh-vacuum chemical vapor deposition technique with disilane (Si2H6) molecular flux is applied to fine contact hole filling. Structural observations reveal that a completely buried Si contact has a stacked structure, in which the lower portion consists of pyramidal epitaxial Si, whose height depends not only on the growth temperature and the Si2H6 flow rate but also on the hole diameter, and polycrystalline Si is deposited on the epitaxial Si. The mechanism of selective epitaxy is interpreted in terms of incubation time and facet growth rate depending on growth temperature and Si2H6 flow rate.
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