Abstract
The evolution of silicon carbide (0001) surface reconstruction upon annealing has been studied by Si K edge extended x-ray absorption fine structure (EXAFS). Using Si KVV Auger electron yield at different emission angles with different surface sensitivities, EXAFS reveals conclusively that Si–Si bonds exist on the surface for all reconstructions. The existence of Si clusters on the 63×63R30° surface was also confirmed by x-ray photoemission spectroscopy. This finding gives us a better understanding of epitaxial graphene formation on SiC.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
