Abstract

A method for fabricating a Si-based packaging platform with a reflector and electrode-guided interconnections is proposed for the packaging component of a high-power light-emitting diode (LED) module. The reflector is fabricated by Ni/Au/Ag-electroplating which is patterned by SU-8 2075 and 4620 negative photo-resistors and the electrical interconnections are formed by Cu/Au-electroplating in the same body. The heat generated by the LED chip is dissipated directly to the Si body through the large metal-plated platform. This method is suitable for high-efficiency and low-cost LED packaging.

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