Si-Based MOSFET and Thin Film Transistor Prepared via Hot Wire Implantation Doping Technique

Abstract

The silicon metal-oxide–semiconductor field-effect transistor (MOSFET) prepared via a hot wire implantation doping technique is reported in this letter. Auger electron spectroscopy results indicate that the junction depth of the phosphorus was $\sim 80$ nm. It was also found that the carrier concentration of the phosphorus was $\sim 5.83 \times 10^{\mathrm {\mathbf {20}}}~\mathrm{cm}^{\mathrm {\mathbf {-3}}}$ , as determined using from room-temperature Hall measurements. For the MOSFET device, experimental results showed drain current-drain voltage ( $I_{D}$ – $V_{D}$ ) characteristics of the device measured in the dark. The transistor exhibits standard saturation and pinch-off characteristics, indicating that the entire channel region under the gate metal can be completely depleted. The technique can also be applied to thin-film transistors.