Abstract
The photoluminescence (PL) of Ge/Si nanostructures synthesized by using Ge+ ion bombardment is studied. The structure represents a Si substrate with GeSi nanoclusters created by 80 keV Ge implantation with a fluence of ∼1015 ions/cm2 and subsequent thermal annealing. The PL measurements confirm the advantage of Ge/Si structures synthesized using Ge+ ion bombardment over the usual epitaxial structures with GeSi quantum dots. The presence of defects produced by Ge implantation results in pronounced PL at telecom wavelengths up to room temperature. The results provide a basis for creating efficient light emitters compatible with the existing Si technology.
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