Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K

Abstract

A Si-based monolithic laser is strongly desired for the full integration of Si-photonics. Lasing from the direct bandgap group-IV GeSn alloy has opened a new avenue, different from the hybrid III–V-on-Si integration approach. We demonstrated optically pumped GeSn lasers on Si with broad wavelength coverage from 2 to 3 μm. The GeSn alloys were grown using newly developed approaches with an industry standard chemical vapor deposition reactor and low-cost commercially available precursors. The achieved maximum Sn composition of 17.5% exceeded the generally acknowledged Sn incorporation limits found with similar deposition chemistries. The highest lasing temperature was measured as 180 K with the active layer thickness as thin as 260 nm. The unprecedented lasing performance is mainly due to the unique growth approaches, which offer high-quality epitaxial materials. The results reported in this work show a major advance toward Si-based mid-infrared laser sources for integrated photonics.