Si and SiGe millimeterwave integrated circuits for sensor and communications applications

Abstract

Silicon based monolithic integrated millimeter-wave circuits have been suggested in 1981 by the RCA group of A. Rosen et al. Since 1986 in the field of silicon monolithic millimeter-wave integrated circuits (SIMMWICs) there are increasing research activities at the former AEG-Telefunken Research Institute which has merged now into the Daimler-Benz Research Center and at the Technische Universitat Munchen. Up to now SIMMWICs for frequencies up to above 100 GHz have already been fabricated, and the suitability of silicon as the substrate material for monolithic integrated millimeter-wave circuits has been successfully demonstrated. The SiGe heterojunction bipolar transistor (HBT) is a promising candidate for silicon based monolithic integrated millimeter-wave circuits. The IMPATT diode provides high oscillator output power combined with high efficiency. Monolithic integration of solid-state devices provides the possibility of low-cost production, improved reliability, small size and light weight, and easy assembly. The linear passive parts of SIMMWICs may be realized in planar circuit technology. In the frequency region above 60 GHz SIMMWICs of only a few millimeters size may also include planar antenna structures. The integration of the antenna structures allows the direct coupling of SIMMWICs to the radiation field. Monolithic integrated millimeter-wave circuits based on silicon and SiGe will give new options for millimeter-wave sensor and communication applications.