Abstract
We have studied AlGaAs:Si grown by molecular beam epitaxy before and after post-growth hydrogen plasma treatment by low temperature photoluminescence (PL) capacitance-voltage, and Hall effect. The PL strength increases after hydrogen plasma treatment. We observe, for the first time, that in n-type AlGaAs:Si not only the shallow donors but also the Si acceptor can be passivated by a long time (3 h) hydrogen diffusion, at 570 K. The change of the relative PL intensities associated with the Si and C acceptors demonstrates the dependence of the passivation effect on the chemical species.
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