Abstract
Photoluminescence has been used to investigate the behavior of Si-implanted InP, submitted to a postimplantation rapid thermal annealing. Compared with the non-implanted material, the implanted crystal displays a new broad band around 1.382 eV, in the low temperature (2 K) spectra. This band appears to be made of two unresolved recombination paths ascribed to the electron–acceptor (e,A°) and donor–acceptor pair recombinations of the silicon acceptor impurity substituted on phosphorus site. Besides the Zn-related transitions to s and p excited states, the selective excitation of the donor–acceptor pairs reveals additional recombination paths, ascribed to transitions to 2s3/2 and 2p5/2 (Γ7 and Γ8) excited states of silicon. The acceptor behavior of Si in InP is hence given a definite support by this work.
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