Si 2p core-level shifts at the CdTe/Si(100) interface

Abstract

Growth of CdTe(111)B on Si(100) by molecular beam epitaxy (MBE) was studied with photoelectron spectroscopy using synchrotron radiation. First, a monolayer of Te forms on top of the Si(100) substrate. We suggest that these Te atoms replace the Si dimer atoms and form dimer rows. The surface peak in the Si 2p spectra from clean Si(100) is replaced by four adatom-induced peaks. They are assigned to Si atoms bound to one, two, three and four Te atoms, respectively. Some Te seems to diffuse into the substrate. Finally, CdTe(111)B grows on such Te-terminated Si(100) surfaces, with little effect on the interface electronic structure.