Abstract
A quick and relatively simple technique for stripping off Si wafers of its native oxide and carbon impurities, using pulsed laser ablation at room temperature, is presented. In a chamber at 10-10 Torr, an oxidized Si (100) surface is ablated with 248 nm UV radiation from a KrF excimer laser. Experiments using 200 pulses of different laser energy densities were performed until a clean surface, at 600 mJ/cm 2, was obtained as determined by Auger electron spectroscopy and ellipsometry measurements. The slightly out of focus laser beam is scanned over the selected area leaving an atomically 1×1 feceted Si surface, as shown by RHEED. The familiar 1×2 reconstructed Si surface may be obtained through a post annealing process.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
