Abstract
The atomic arrangement of a Si(100)-c(4\ifmmode\times\else\texttimes\fi{}4) metastable surface is investigated using scanning tunneling microscopy (STM). The structure is formed on a Si(100) surface by exposing to hydrogen with a pressure of 2\ifmmode\times\else\texttimes\fi{}${10}^{\mathrm{\ensuremath{-}}5}$ Torr at 700 \ifmmode^\circ\else\textdegree\fi{}C over 30 min. A comparison of filled- and empty-state STM images indicates the existence of a single dimer on the top layer in the c(4\ifmmode\times\else\texttimes\fi{}4) unit cell. This result contradicts all previously proposed structural models, which have a missing dimer in the unit cell. The structure revealed by the present study is in reasonable agreement with the characteristic low-energy-electron-diffraction pattern previously reported.
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