Abstract
A $\mathrm{Si}(100)\ensuremath{-}c(4\ifmmode\times\else\texttimes\fi{}8)$ reconstruction is formed using a two-step solid phase epitaxy (SPE) technique. Calculations indicate that the reconstruction has a high surface energy (0.4 eV per surface atom above $2\ifmmode\times\else\texttimes\fi{}1).$ Strain releasing mechanisms play a dominant role within the local energy scope around the surface energy. Dynamic simulations show that the system is kinetically pushed into this energy scope. Analytical modeling of SPE discloses a highly nonequilibrium thermodynamic process in which the surface atoms obtain high kinetic energy by self-overheating and are trapped in the high-energy state by instant self-quenching.
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