Abstract
This paper investigated phase change Si1Sb2Te3 material for application of chalcogenide random access memory. Current-voltage performance was conducted to determine threshold current of phase change from amorphous phase to polycrystalline phase. The film holds a threshold current about 0.155 mA, which is smaller than the value 0.31 mA of Ge2Sb2Te5 film. Amorphous Si1Sb2Te3 changes to face-centred-cubic structure at ~ 180°C and changes to hexagonal structure at ~ 270°C. Annealing temperature dependent electric resistivity of Si1Sb2Te3 film was studied by four-point probe method. Data retention of the films was characterized as well.
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